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FDTD method analysis tool for LEDs with two different surface structures.
Two types of LED device structures with different surface shapes were simulated using the FDTD method in APSYS, resulting in an angle-dependent light intensity distribution. The differences in surface shape are reflected in the light intensity. A 3D structure can be simulated using the same method as in 2D.
Numerical analysis tool for GaN-based nanowire or nanotube devices.
Efficient analysis of GaN substrate nanowire and nanotube structures for LEDs using the device simulator (APSYS). Examples of device modeling and simulation are presented. A single nanotube with 15,000 mesh points in the quantum well was calculated as a test. The typical I-V characteristic calculation took about 20 minutes on a laptop with OS: Windows 7 and CPU: i5. The physical models and numerical analysis functions used in APSYS include "self-consistent calculations of the drift diffusion model combined with quantum mechanics," "utilization of polarization charges in polar and semi-polar forms," "thermal model," "IQE drop due to EBL doping, band offset, and polarization charges," and "extraction calculations using FDTD," among others.
Device modeling and analysis tools for photonic crystal LEDs
This introduces the points of modeling and analysis examples of photonic crystal LEDs (PhCLED). It considers simulations based on photonic crystal LEDs with DBR. (2D/3D drift-diffusion model. Band analysis through physical simulation. Spontaneous emission and guided mode. Consideration of the depth of air holes, etc.) Additionally, it presents an analysis of guided multimodes using InGaN photonic crystal LEDs. The results of these simulations are consistent with reported theories and experiments.
3D modeling tool for high-brightness light-emitting diodes (SLED)
Explanation of a theoretical model based on Green's function theory. Analysis using test devices. (Profile of lateral mode, gain, band diagram, carrier distribution under different injections, spatial hole burning, I-V characteristics, L-I curve, 3D effects on amplifier spontaneous emission.)
Analysis tool based on a self-consistent model of quantum well infrared sensors.
Crosslight's APSYS can provide a comprehensive physical model for the analysis of QWIP (Quantum Well Infrared Photodetectors) devices. The validity of the model is sufficiently reasonable when compared to experimental results. Non-local quantum corrections to the drift-diffusion theory are necessary to explain the photo-carrier extraction in the properties of QWIPs.
Analysis tool for leakage caused by Auger recombination in quantum wells.
APSYS can provide various models related to the efficiency degradation of LEDs. (Potential strain in quantum wells and barriers due to polarization charge. Cold carrier leakage across quantum barriers and electron blocking layers. Non-local transport due to hot carriers. Non-local hot Auger electron leakage via thermionic emission (Auger-thermionic model). Non-local direct escape from quantum wells dependent on Auger recombination rate (Auger-direct model). Hot carrier non-local emission from quantum barriers dependent on Auger recombination rate (Auger-indirect model).)
Device modeling and analysis of cross-light using RCLED devices as an example.
Introducing various types of analyses of RCLEDs. (Comparing experimental results using InGaAs/AlGaAs RCLED as an example. RCLED with a structure similar to VCSEL using GaAs/AlGaAs materials with multiple quantum wells (MQW). RCLED with detuned DBR. RCLED with a long resonator.) The device simulator APSYS enables an all-in-one analysis and design approach.
3D analysis tool for InGaN/GaN MQW LEDs with surface structures.
Constructing 3D structured devices with the process simulator CSuprem. Introducing the modeling procedure for textured surfaces using a combination of APSYS and FDTD. Calculating electrical and optical properties using APSYS and 3D ray tracing (performing 3D ray tracing with FDTD data to extract optical power). By combining several modules of the Crosslight software, it is possible to accurately calculate LEDs with surface structures.
Analysis tool based on a physical model of a Mach-Zehnder type optical modulator with multiple quantum wells on an InP substrate.
The simulation of Mach-Zehnder type optical modulators requires everything from microscopic quantum well models to waveguide and circuit models related to the system. Crosslight provides integrated cutting-edge solutions for the design of Mach-Zehnder type optical modulators. The materials introduce various physical and mathematical models and explain examples of actual modeling.
Analysis tool for optical detection devices with Type II quantum well structure.
Introducing applicable models and functions. (A technique that bundles 150 pairs of Type-II MQW using input commands. Deriving the optical gain spectrum of Type-II quantum wells from the optical gain model of Complex MQW. Designing the absorption spectrum based on the band alignments of Type-II quantum wells. The effects of a mini-band model based on quantum mechanics.)
Avalanche Photodiode Analysis Tool
Introducing the physical model of APSYS used in the simulation of APDs (Avalanche Photodiodes). (Drift-diffusion and hydrodynamic models. Impact ionization and excess noise factors. Resonant condition.) Additionally, an overview of the modeling and analysis results of APD devices is provided. (Modeling of InP/InGaAs SAGCM APD. Modeling of InGaAs/AlGaAs RCE SAGCM APD. Hot carrier model of GaAs/AlGaAs PIN APD.)
Device analysis tool for solar cells with quantum well (QW) and quantum dot (QD) structures.
This paper introduces a demonstration of the usefulness of quantum well/quantum dot solar cells by incorporating the miniband model into the drift-diffusion theory framework. Different energies of the minibands allow for the calculation of cold carrier and hot carrier minibands. The quantum states solution of 2D quantum wells and 3D quantum dots precisely calculates the broad absorption spectrum in quantum well/quantum dot materials.
![[Video] 3D Device Simulator for Semiconductor Lasers PICS3D](https://image.mono.ipros.com/public/product/image/8c4/2000337560/IPROS1667069956679628175.jpg?w=280&h=280)
Various analyses such as mode, optical gain, light intensity, spectrum, carrier distribution, band, and wave function are possible. A free trial version is available!
■A demo video of the "Trial Guide" is currently available on the YouTube link below! ■To request a trial version, please use the "Trial Version Application Form." (For product details, please refer to the catalog or contact us.)
